Electrostatic capacitance-type input device and input device-attached electro-optical apparatus

ABSTRACT

An electrostatic capacitance-type input device in which input position detecting electrodes are disposed in an input area of a substrate, includes a lower layer-side conductive film, an interlayer insulating film, and an upper layer-side conductive film, which are stacked on the substrate in order from the substrate side. A first input position detecting electrode and a second input position detecting electrode are formed as the input position detecting electrodes by a first conductive film out of the lower and upper layer-side conductive films. A relay electrode overlaps with the first input position detecting electrode in the intersection portion to be electrically connected to the discontinued portion of the second input position detecting electrode. An input area shield electrode that overlaps with the first and second input position detecting electrodes are formed by a second conductive film out of the lower and upper layer-side conductive films.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a continuation application of U.S. PatentApplication No. 12/898,344, filed Oct. 5, 2010, which application claimspriority to Japanese Patent Application No. JP 2009-242158 filed on Oct.21, 2009, the entire contents of which is hereby incorporated byreference.

BACKGROUND

The present disclosure relates to an electrostatic capacitance-typeinput device that detects an input position based on a change inelectrostatic capacitance coupled with an input position detectingelectrode and an input device-attached electro-optical apparatus thatincludes the electrostatic capacitance-type input device.

Among electronic apparatuses such as cellular phones, car navigationsystems, personal computers, ticket-vending machines, and bankingterminals, there are apparatuses, in which an input device termed atouch panel is arranged on the surface of a liquid crystal device or thelike, allowing a user to input information while referring to an imagedisplayed in an image display area of the liquid crystal device. Amongsuch input devices, electrostatic capacitance-type input devices monitorelectrostatic capacitance that is coupled with each of a plurality ofinput position detecting electrodes. Thus, when a finger is in proximityto any of the plurality of input position detecting electrodes, theelectrostatic capacitance of the input position detecting electrode towhich the finger is in proximity increases by the amount correspondingto electrostatic capacitance generated between the finger and the inputposition detecting electrode. Accordingly, the electrode to which thefinger is in proximity can be specified.

Such electrostatic capacitance-type input devices detect a change in thecapacitance coupled with the input position detecting electrode, andaccordingly, can be easily influenced by electromagnetic wave noise.Thus, electrostatic capacitance-type input devices in which atransparent substrate for electric shielding or a conductive film forelectric shielding is formed on a side opposite to the input operationside is disposed are proposed (see JP-T-2003-511799).

SUMMARY

However, in the shielding structure disclosed in JP-T-2003-511799, sincea substrate is added to the electrostatic capacitance-type input devicefor blocking electromagnetic noise that may penetrate from the inputoperation side, the number of components is increased. Therefore thereis a problem in that the cost is increased, and the thickness of theelectrostatic capacitance-type input device is increased.

Thus, it is desirable to provide an electrostatic capacitance-type inputdevice that is not easily influenced by electromagnetic wave noise,which may be penetrated from a side opposite to the input operationside, without adding a substrate used for electric shielding and aninput-device-attached electro-optical apparatus including theelectrostatic capacitance-type input device.

According to an embodiment, there is provided an electrostaticcapacitance-type input device in which a plurality of input positiondetecting electrodes are disposed in an input area of a substrate. Theelectrostatic capacitance-type input device includes: a lower layer-sideconductive film; an interlayer insulating film; and an upper layer-sideconductive film, which are stacked on the substrate in order from thesubstrate side. A first input position detecting electrode that extendsin a first direction of an in-plane direction of the substrate and asecond input position detecting electrode that extends in a seconddirection intersecting the first direction of the in-plane direction ofthe substrate and includes a discontinued portion in an intersectionportion of the first input position detecting electrode and the secondinput position detecting electrode are formed as the input positiondetecting electrodes by a first conductive film, which is positioned inan input operation side, out of the lower layer-side conductive film andthe upper layer-side conductive film, and a relay electrode thatoverlaps with the first input position detecting electrode through theinterlayer insulating film in the intersection portion so as to beelectrically connected to the discontinued portion of the second inputposition detecting electrode and an input area shield electrode that isseparated from the relay electrode and overlaps with the first inputposition detecting electrode and the second input position detectingelectrode through the interlayer insulating film in a plan view areformed by a second conductive film, which is positioned on a sideopposite to the input operation side, out of the lower layer-sideconductive film and the upper layer-side conductive film.

According to the above-described electrostatic capacitance-type inputdevice, out of the lower layer-side conductive film and the upperlayer-side conductive film that are stacked in the substrate, the inputposition detecting electrodes (the first input position detectingelectrode and the second input position detecting electrode) are formedby the first conductive film positioned on the input operation side, andthe input area shield electrode that overlaps with the input positiondetecting electrodes (the first input position detecting electrode andthe second input position detecting electrode) in a plan view are formedby the second conductive film that is positioned on a side opposite tothe input operation side. Accordingly, the electrostaticcapacitance-type input device is not easily influenced byelectromagnetic wave noise that may penetrate the input area from theside opposite to the input operation side. In addition, the input areashield electrode, similarly to a relay electrode that is electricallyconnected to the second input position detecting electrode that isdiscontinued in the intersection portion of the first input positiondetecting electrode and the second input position detecting electrode,is formed by the second conductive film. Accordingly, the electrostaticcapacitance-type input device is configured not to be easily influencedby electromagnetic noise, which may penetrate into the input area fromthe side opposite to the input operation side, without adding asubstrate used for electromagnetic shielding.

In the above-described electrostatic capacitance-type input device, itis preferable that, in an area of the substrate that is positioned on anouter side of the input area, a wiring that is electrically connected tothe input position detecting electrode by one conductive film of thefirst conductive film and the second conductive film is formed, and anouter periphery-side shield electrode that overlaps with the wiringthrough the interlayer insulating film in a plane view is formed by theother conductive film of the first conductive film and the secondconductive film. In such a case, the electrostatic capacitance-typeinput device can be configured not to be easily influenced byelectromagnetic wave noise that may penetrate the wiring.

In the above-described electrostatic capacitance-type input device, aconfiguration in which the wiring is formed by the first conductivefilm, and the outer periphery-side shield electrode is formed by thesecond conductive film may be employed. In such a case, theelectrostatic capacitance-type input device can be configured not to beeasily influenced by electromagnetic wave noise that may penetrate intothe wiring from the side opposite to the input operation side.

In such a case, it is preferable that the outer periphery-side shieldelectrode is formed integrally with the input area shield electrode bythe second conductive film. In such a case, a shield electrode that iscontinuous over the entire area extending over the input area and theouter periphery-side area can be disposed. Accordingly, theelectrostatic capacitance-type input device can be configured not to beeasily influenced by electromagnetic wave noise that may penetrate intothe input area or the wiring from the side opposite to the inputoperation side.

In the above-described electrostatic capacitance-type input device, aconfiguration in which the wiring is formed by the second conductivefilm, and the outer periphery-side shield electrode is formed by thefirst conductive film may be employed. In such a case, the electrostaticcapacitance-type input device can be configured not to be easilyinfluenced by electromagnetic wave noise that may penetrate into thewiring from the input operation side.

In the above-described electrostatic capacitance-type input device, itis preferable that, on an outer periphery side of the wiring on thesubstrate, a shielding auxiliary electrode is formed by the conductivefilm, which is disposed on the side forming the wiring, out of the firstconductive film and the second conductive film, and the shieldingauxiliary electrode and the shield electrode overlap with each other soas to be electrically connected to each other in an area in which theinterlayer insulating film disposed on the outer periphery side of thewiring is not formed. In such a case, the electrostatic capacitance-typeinput device can be configured not to be easily influenced byelectromagnetic wave noise that may penetrate into the wiring from theouter periphery side of the wiring.

In the above-described electrostatic capacitance-type input device,there are cases where the lower layer-side conductive film, theinterlayer insulating film, and the upper-layer side conductive film areformed on a substrate face that is positioned on the input operationside of the substrate. In such a case, the upper layer-side conductivefilm is the first conductive film, and the lower layer-side conductivefilm is the second conductive film.

In the above-described electrostatic capacitance-type input device, aconfiguration in which the lower layer-side conductive film, theinterlayer insulating film, and the upper-layer side conductive film areformed on a substrate face that is positioned on a side opposite to theinput operation side of the substrate may be employed. In such a case,the lower layer-side conductive film is the first conductive film, andthe upper layer-side conductive film is the second conductive film.

The electrostatic capacitance-type input device according to theembodiment can be used, for example, for configuring an inputdevice-attached electro-optical apparatus. In such an inputdevice-attached electro-optical apparatus, an electro-optical panel forgenerating an image is configured on a side of the substrate that isopposite to the input operation side.

The input device-attached electro-optical apparatus according to theembodiment of the present invention can be used in an electronicapparatus such as a cellular phone, a car navigation system, a personalcomputer, a ticket-vending machine, or a banking terminal.

Additional features and advantages are described herein, and will beapparent from the following Detailed Description and the figures.

BRIEF DESCRIPTION OF THE FIGURES

FIGS. 1A to 1C are schematic diagrams illustrating an electrostaticcapacitance-type input device according to an embodiment.

FIGS. 2A and 2B are schematic diagrams illustrating the cross-sectionalconfigurations of input device-attached electro-optical apparatusesaccording to embodiments.

FIGS. 3A to 3D are schematic diagrams illustrating the planarconfigurations of an electrostatic capacitance-type input deviceaccording to Embodiment 1.

FIG. 4 is an enlarged schematic diagram illustrating the planarconfiguration of electrodes and the like that are formed on a substrateof an electrostatic capacitance-type input device according toEmbodiment 1.

FIGS. 5A, 5B, and 5C are schematic diagrams illustrating thecross-sectional configurations of the substrate of the electrostaticcapacitance-type input device according to Embodiment 1.

FIGS. 6A to 6D are schematic diagrams illustrating the planarconfigurations of an electrostatic capacitance-type input deviceaccording to Embodiment 2.

FIG. 7 is an enlarged schematic diagram illustrating the planarconfiguration of electrodes and the like that are formed on a substrateof an electrostatic capacitance-type input device according toEmbodiment 2.

FIGS. 8A, 8B, and 8C are schematic diagrams illustrating thecross-sectional configurations of the substrate of the electrostaticcapacitance-type input device according to Embodiment 2.

FIGS. 9A, 9B, and 9C are schematic diagrams illustrating thecross-sectional configurations of a substrate of an electrostaticcapacitance-type input device according to Embodiment 3.

FIGS. 10A, 10B, and 10C are schematic diagrams illustrating thecross-sectional configurations of a substrate of an electrostaticcapacitance-type input device according to Embodiment 4.

FIGS. 11A, 11B, and 11C are schematic diagrams of electronic apparatusesincluding an electrostatic capacitance-type input device according to anembodiment.

DETAILED DESCRIPTION

Embodiments will be described with reference to the accompanyingdrawings. In the drawings referred to in the description presentedbelow, in order to allow each layer or each member to have a size to berecognizable in the drawings, the scales of the layers or the membersare differently set. Hereinafter, after a basic configuration that iscommon to the embodiments is described, detailed description of eachembodiment will be described.

[Basic Configuration]

(Entire Configuration of Input Device-Attached Electro-OpticalApparatus)

FIGS. 1A to 1C are schematic diagrams illustrating an electrostaticcapacitance-type input device according to an embodiment. FIG. 1A is aschematic diagram illustrating the entire configuration of an inputdevice-attached electro-optical apparatus including the electrostaticcapacitance-type input device of this embodiment. FIG. 1B is a schematicdiagram illustrating the electric configuration of the electrostaticcapacitance-type input device. FIG. 1C is a schematic diagramillustrating an electric potential that is supplied to the electrostaticcapacitance-type input device. FIGS. 2A and 2B are schematic diagramsillustrating the cross-sectional configurations of input device-attachedelectro-optical apparatuses according to embodiments of the presentinvention. FIG. 2A is a schematic diagram illustrating a configurationexample in which an input position detecting electrode is disposed on afirst face side of the substrate that is positioned on an inputoperation side. FIG. 2B is a schematic diagram illustrating aconfiguration example in which the input position detecting electrode isdisposed on a second face side of the substrate that is opposite to theinput operation side.

As represented in FIG. 1A, generally, the input device-attachedelectro-optical apparatus 100 of this embodiment has an image generatingdevice 5 that is configured by a liquid crystal device or the like andan electrostatic capacitance-type input device 1 that is disposed on aface of the image generating device 5, which emits display light, in anoverlapping manner. The electrostatic capacitance-type input device 1includes an input panel 2 (touch panel), and the image generating device5 includes a liquid crystal panel serving as an electro-optical panel 5a (display panel). In this embodiment, both the input panel 2 and theelectro-optical panel 5 a have a planar shape of a rectangle, and thecenter area of the electrostatic capacitance-type input device 1 and theinput device-attached electro-optical apparatus 100 in the plan view isan input area 2 a. In addition, an area in which the image generatingdevice 5 and the input area 2 a of the input device-attachedelectro-optical apparatus 100 overlap with each other in the plan viewis an image forming area. A flexible wiring substrate 35 is connected toa side of the input panel 2 on which an end portion 20 e is positioned,and a flexible wiring substrate 73 is connected to a side of theelectro-optical panel 5 a on which the end portion 20 e is positioned.

As represented in FIG. 1B, in the electrostatic capacitance-type inputdevice 1, a control IC 10 used for performing an input operation on theinput panel 2 is electrically connected to the input panel 2 through theflexible wiring substrate 35. Thus, an electric potential to bedescribed later with reference to FIG. 1C is input to the input panel 2from the IC 10.

In FIGS. 1A, 2A, and 2B, the image generating device 5 is an activematrix-type liquid crystal display device of transmission type orsemi-transmission reflection type. On a side (a side opposite to thedisplay light output side) of the electro-optical panel 5 a that isopposite to a side on which the input panel 2 is disposed, a back lightdevice (not shown in the figure) is disposed. The back light device, forexample, has a light guiding plate, which has translucency, disposed ona side of the electro-optical panel 5 a that is opposite to the side onwhich the electrostatic capacitance-type input device 1 is disposed inan overlapping manner and a light source such as a light emitting diodethat emits white light or the like toward a side end portion of thelight guiding plate. After light emitted from the light source isincident to the side end portion of the light guiding plate, the lightis output toward the electro-optical panel 5 a while propagating insidethe light guiding plate. Between the light guiding plate and theelectro-optical panel 5 a, a sheet-shaped optical member such as a lightscattering sheet or a prism sheet may be disposed.

In the image generating device 5, on the display light output side ofthe electro-optical panel 5 a, a first polarizing plate 81 is disposedin an overlapping manner. In addition, on the opposite side of theelectro-optical panel 5 a, a second polarizing plate 82 is disposed inan overlapping manner. Thus, the electrostatic capacitance-type inputdevice 1 is bonded to the first polarizing plate 81 by a translucentadhesive agent 99 such as an acrylic resin system. The electro-opticalpanel 5 a includes a translucent component substrate 50 that is disposedon a side opposite to the display light output side and a translucentopposing substrate 60 that is disposed on the display light output sideso as to face the component substrate 50. The opposing substrate 60 andthe component substrate 50 are bonded together by a rectangularframe-shaped sealing member 71, and a liquid crystal layer 55 ismaintained within an area between the opposing substrate 60 and thecomponent substrate 50 that is surrounded by the sealing member 71. On aface of the component substrate 50 that faces the opposing substrate 60,a plurality of pixel electrodes 58 are formed by a translucentconductive film such as an ITO (Indium Tin Oxide) film. In addition, ona face of the opposing substrate 60 that faces the component substrate50, a common electrode 68 is formed by a translucent conductive filmsuch as an ITO film. In addition, a color filter is formed on theopposing substrate 60. When the image generating device 5 is the IPS (InPlane Switching) type or the FFS (Fringe Field Switching) type, thecommon electrode 68 is disposed on the component substrate 50 side. Thecomponent substrate 50 may be disposed on the display light output sideof the opposing substrate 60. A driving IC 75 is built in an overhangarea 59 of the component substrate 50 that overhangs from the edge ofthe opposing substrate 60 by using a COG technique, and the flexiblewiring substrate 73 is bonded to the overhang area 59. On the componentsubstrate 50, a driving circuit may be formed simultaneously with aswitching device disposed on the component substrate 50.

(Detailed Configuration of Electrostatic Capacitance-Type Input Device1)

In the electrostatic capacitance-type input device 1 shown in FIGS. 2Aand 2B, the input panel 2 includes a translucent substrate 20 that isconfigured by a glass plate, a plastic plate, or the like. In thisembodiment, a glass substrate is used as the substrate 20. In a casewhere the substrate 20 is formed from a plastic material, as the plasticmaterial, a translucent sheet having heat resistance such as PET(polyethylene terephthalate), PC (polycarbonate), PES (polyethersulfone), PI (polyimide), or cyclic olefin resin includingpolynorbornene may be used. Hereinafter, a substrate face positioned onthe input operation side of the substrate 20 will be described as afirst face 20 a, and a substrate face positioned on a side opposite tothe input operation side will be described as a second face 20 b.

Of the electrostatic capacitance-type input devices 1 shown in FIGS. 2Aand 2B, in the configuration example represented in FIG. 2A, on thefirst face 20 a of the substrate 20, a lower layer-side conductive film4 a, an interlayer insulating film 214, and an upper layer-sideconductive film 4 b are formed from the lower layer side toward theupper layer side viewed from the substrate 20, and an input positiondetecting electrode 21 is formed by the upper layer-side conductive film4 b out of the lower layer-side conductive film 4 a and the upperlayer-side conductive film 4 b, which will be described later in detail.In addition, a relay electrode or an input area shield electrode isformed by the lower layer-side conductive film 4 a. In the end portion20 e of the substrate 20, the flexible wiring substrate 35 is connectedto the first face 20 a. To the first face 20 a side of the substrate 20,an insulating cover 90 having translucency is attached by using anadhesive agent 90 e or the like. In an area of the cover 90 thatoverlaps with an outer area 2 b of the first face 20 a of the substrate20, a light shielding layer 90 a having an insulating property isprinted. An area that is surrounded by the light shielding layer 90 a isan input area 2 a. The light shielding layer 90 a overlaps with theouter area of the electro-optical panel 5 a and shields light leakingfrom the light source of the image forming device 5 or the end portionof the light guiding plate thereof

In the configuration example represented in FIG. 2B, on the second face20 b of the substrate 20, a lower layer-side conductive film 4 a, aninterlayer insulating film 214, and an upper layer-side conductive film4 b are formed from the lower layer side toward the upper layer sideviewed from the substrate 20. The input position detecting electrode 21is formed by the lower layer-side conductive film 4 a out of the lowerlayer-side conductive film 4 a and the upper layer-side conductive film4 b. In addition, a relay electrode or an input area shield electrode isformed by the upper layer-side conductive film 4 b. In such aconfiguration, in the end portion 20 e of the substrate 20, the flexiblewiring substrate 35 is connected to the second face 20 b. Also in thisembodiment, to the first face 20 a side of the substrate 20, aninsulating cover 90 having translucency is attached by using an adhesiveagent 90 e or the like. In an area of the cover 90 that overlaps withthe outer area 2 b of the first face 20 a of the substrate 20, a lightshielding layer 90 a having an insulating property is printed.

Hereinafter, examples of a form (the form represented in FIG. 2A) inwhich the lower-side conductive film 4 a, the interlayer insulating film214, and the upper layer-side conductive film 4 b are formed on thefirst face 20 a positioned on the input operation side of the substrate20 according to embodiments of the present invention will be describedas Embodiments 1 and 2. In such a case, of the lower layer-sideconductive film 4 a and the upper layer-side conductive film 4 b, theupper layer-side conductive film 4 b corresponds to the first conductivefilm that is positioned on the input operation side, and the lowerlayer-side conductive film 4 a corresponds to the second conductive filmthat is positioned on a side opposite to the input operation side.

In addition, examples of a form (the form represented in FIG. 2B), inwhich the lower-side conductive film 4 a, the interlayer insulating film214, and the upper layer-side conductive film 4 b are formed on thesecond face 20 b positioned on a side opposite to the input operationside of the substrate 20, according to embodiments will be described asEmbodiments 3 and 4. In such a case, of the lower layer-side conductivefilm 4 a and the upper layer-side conductive film 4 b, the lowerlayer-side conductive film 4 a corresponds to the first conductive filmthat is positioned on the input operation side, and the upper layer-sideconductive film 4 b corresponds to the second conductive film that ispositioned on a side opposite to the input operation side.

Embodiment 1

Hereinafter, the electrostatic capacitance-type input device 1 of a typethat is described with reference to FIG. 2A will be described withreference to FIGS. 3A to 5C.

FIGS. 3A to 3D are schematic diagrams illustrating the planarconfigurations of the electrostatic capacitance-type input device 1according to Embodiment 1. FIG. 3A is a schematic diagram illustratingthe planar positional relationship of electrodes and the like that areformed on the substrate 20 of the electrostatic capacitance-type inputdevice 1. FIG. 3B is a schematic diagram illustrating the planarconfiguration of the upper layer-side conductive film 4 b that is formedon the substrate 20. FIG. 3C is a schematic diagram illustrating theplanar configuration of the interlayer insulating film 214 that isformed on the substrate 20. FIG. 3D is a schematic diagram illustratingthe planar configuration of the upper layer-side conductive film 4 bthat is formed on the substrate 20. In FIG. 3A, elements that are shownin FIGS. 3B, 3C, and 3D are represented in an overlapping manner. FIG. 4is an enlarged schematic diagram illustrating the planar configurationof electrodes and the like that are formed on the substrate 20 of theelectrostatic capacitance-type input device 1 according to Embodiment 1.

In FIGS. 3B, 3C, and 3D, an area in which the lower layer-sideconductive film 4 a, the interlayer insulating film 214, and the upperlayer-side conductive film 4 b are formed is represented as a gray area.In addition, in FIG. 3A and 4, the lower layer-side conductive film 4 ais denoted by a solid line, the interlayer insulating film 214 isdenoted by a dotted line, and the upper layer-side conductive film 4 bis denoted by a dashed dotted line. In addition, in FIGS. 3A, 3B, 3C,3D, and 4, each portion of the input area 2 a is denoted by a markhaving a letter “L” shape. The same applies to drawings referred to inEmbodiment 2 to be described later.

FIGS. 5A, 5B, and 5C are schematic diagrams illustrating thecross-sectional configurations of the substrate 20 of the electrostaticcapacitance-type input device 1 according to Embodiment 1. FIGS. 5A, 5B,and 5C are cross-sectional views of the substrate 20 taken along linesA1-A1′, B1-B1′, and C1-C1′ shown in FIG. 4.

The electrostatic capacitance-type input device 1 described below is anexample of the form (the form represented in FIG. 2A), in which thelower layer-side conductive film 4 a, the interlayer insulating film214, and the upper layer-side conductive film 4 b are formed on thefirst face 20 a that is positioned on the input operation side,according to an embodiment. Here, the upper layer-side conductive film 4b corresponds to the first conductive film that is positioned on theinput operation side, and the lower layer-side conductive film 4 acorresponds to the second conductive film that is positioned on the sideopposite to the input operation side.

As shown in FIGS. 3A to 3D, FIG. 4, and FIGS. 5A to 5C, according to theelectrostatic capacitance-type input device 1 of this embodiment, on thefirst face 20 a side of the substrate 20, the lower layer-sideconductive film 4 a, the interlayer insulating film 214, and the upperlayer-side conductive film 4 b are sequentially formed from the lowerlayer side toward the upper layer side viewed from the substrate 20. Inthis embodiment, each of the lower layer-side conductive film 4 a andthe upper layer-side conductive film 4 b is formed of a translucentconductive film having a film thickness of 10 nm to 40 nm such as an ITOfilm or an IZO (Indium Zinc Oxide) film, and the interlayer insulatingfilm 214 is formed of a translucent insulating film having a filmthickness of 40 nm to 60 mm such as a silicon oxide film. On theentirety of the first face 20 a of the substrate 20, a translucentunderlying protection film that is formed of a silicon oxide film or thelike may be formed. In such a case, the lower layer-side conductive film4 a, the interlayer insulating film 214, and the upper layer-sideconductive film 4 b are sequentially stacked on the underlyingprotection film. In order to configure such an electrostaticcapacitance-type input device 1, first, after the lower layer-sideconductive film 4 a is formed in a pattern shown in FIG. 3B, theinterlayer insulating film 214 is formed in a pattern shown in FIG. 3C.Next, the upper layer-side conductive film 4 b is formed in a patternshown in FIG. 3D.

As shown in FIGS. 3A and 3D, FIG. 4, and FIGS. 5A to 5C, first, theupper layer-side conductive film 4 b is formed as a plurality of rhombicareas in the input area 2 a, and the rhombic areas configure padportions 211 a and 212 a (large area portions) of the input positiondetecting electrodes 21 (the first input position detecting electrode211 and the second input position detecting electrode 212). The padportions 211 a and 212 a are alternately arranged in the X direction andthe Y direction. Of the plurality of the pad portions 211 a, the padportions 211 a that are adjacent to each other in the X direction (thefirst direction) are connected together through a connection portion 211c, and the pad portion 211 a and the connection portion 211 c configurethe first input position detecting electrode 211 that extends in the Xdirection.

On the contrary, the plurality of the pad portions 212 a configure thesecond input position detecting electrode 212 that extends in the Ydirection (the second direction). However, a portion between the padportions 212 a that are adjacent to each other in the Y direction, thatis, a portion overlapping with the connection portion 211 c includes adiscontinued portion.

The upper layer-side conductive film 4 b is formed as a wiring 27extending from the input position detecting electrode 21 (the firstinput position detecting electrode 211 and the second input positiondetecting electrode 212) in the outer area 2 b of the input area 2 a andis formed as a first mounting terminal 24 a and a second mountingterminal 24 b near the end portion 20 e. When such a wiring 27 isconfigured, it is preferable that a metal layer formed from chromium,silver, aluminum, a silver-aluminum alloy, or the like is extended alongan area for forming the wiring 27 on an upper layer of the upperlayer-side conductive film 4 b. By employing such a multiple layerstructure, the wiring resistance of the wiring 27 can be decreased.

In addition, the upper layer-side conductive film 4 b is formed as ashielding auxiliary electrode 29 that passes through an outer peripheryside relative to the wiring 27 in the outer area 2 b of the input area 2a. The shielding auxiliary electrode 29 extends along the end portions20 f, 20 g, and 20 h of the substrate 20, and both ends of the shieldingauxiliary electrode 29 are connected to the second mounting terminal 24b. Here, the shielding auxiliary electrode 29 overhangs to the outerperiphery side relative to the outer periphery of the interlayerinsulating film 214 shown in FIG. 3C in any one of the end portions 20f, 20 g, and 20 h corresponding to three sides of the substrate 20.

As shown in FIGS. 3A and 3C, FIG. 4, and FIGS. 5A to 5C, the interlayerinsulating film 214 is formed in the entirety of the input area 2 a. Inaddition, the interlayer insulating film 214 is also formed on the outerarea 2 b of the input area 2 a and is formed in a large area except theouter periphery of the substrate 20. In the interlayer insulating film214, contact holes 214 a are formed in sets of two. The contact holes214 a are formed in positions overlapping with the end portions of thepad portion 212 a shown in FIG. 3A that face each other through thediscontinued portion 218 a. A gap between the outer periphery of theinterlayer insulating film 214 and the end portion 20 e of the substrate20 is larger than the gaps between the outer periphery of the interlayerinsulating film 214 and other end portions 20 f, 20 g, and 21 h of thesubstrate 20. Accordingly, a space for forming the first mountingterminal 24 a and the second mounting terminal 24 b is secured.

As shown in FIGS. 3A and 3B, FIG. 4, and FIGS. 5A to 5C, the lowerlayer-side conductive film 4 a is formed as a relay electrode 215 in anarea of the input area 2 a that overlaps with the contact hole 214 ashown in FIG. 3C. In addition, the lower layer-side conductive film 4 ais formed in the input area 2 a as an input area shield electrode 25having a slit 25 s interposed between the relay electrode 215 and theinput area shield electrode 25. The input area shield electrode 25 isformed over the entirety of the input area 2 a except the relayelectrode 215 and the slit 25 s.

In addition, the lower layer-side conductive film 4 a is formed as anouter periphery-side shield electrode 28 in the outer area 2 b of theinput area 2 a. Here, the input area shield electrode 25 and the outerperiphery-side shield electrode 28 are formed in a large area of thesubstrate 20 as one beta area. The outer periphery-side shield electrode28 is formed near the end portions 20 f, 20 g, and 20 h corresponding tothree sides of the substrate 20. Thus, near the end portions 20 f, 20 g,and 20 h, the outer periphery-side shield electrode 28 overhangs to theouter periphery side relative to the outer periphery of the interlayerinsulating film 214 shown in FIG. 3C. In addition, the outerperiphery-side shield electrode 28 is formed in a large area also nearthe end portion 20 e of the substrate 20 and overhangs to the outerperiphery side relative to the outer periphery of the interlayerinsulating film 214. However, the outer periphery-side shield electrode28 is formed to have a concave portion 28 a in the area in which thefirst mounting terminal 24 a is formed. The outer periphery-side shieldelectrode 28 is positioned to the inner side relative to the outerperiphery of the interlayer insulating film 214 in an area correspondingto the concave portion 28 a and does not overhang to the outer peripheryside of the interlayer insulating film 214 in the area.

(Configuration of Input Position Detecting Electrode 21)

By overlapping the lower layer-side conductive film 4 a, the interlayerinsulating film 214, and the upper layer-side conductive film 4 b thatare configured as described above, the substrate 20 is configured asshown in FIG. 3A, FIG. 4, and FIGS. 5A, 5B, and 5C. When the substrate20 is seen in the plan view, on the inner side of the input area 2 a, aplurality of the input position detecting electrodes 21 are formed. Inthis embodiment, the input position detecting electrodes 21 areconfigured by a plurality of rows of first input position detectingelectrodes 211 extending in the X direction and a plurality of rows ofsecond input position detecting electrodes 212 extending in the Ydirection.

Here, the input position detecting electrodes 21 (the first inputposition detecting electrode 211 and the second input position detectingelectrode 212) are formed by the upper layer-side conductive film 4 bout of the lower layer-side conductive film 4 a and the upper layer-sideconductive film 4 b and are formed from the same layer. Accordingly, onthe first face 20 a of the substrate 20, there are a plurality ofintersection portions 218 of the first input position detectingelectrodes 211 and the second input position detecting electrodes 212.In this embodiment, of the first input position detecting electrode 211and the second input position detecting electrode 212, the first inputposition detecting electrode 211 is connected by the connection portion211 c formed from the upper layer-side conductive film 4 b in the Xdirection so as to extend also in the intersection portion 218. On thecontrary, the discontinued portion 218 a is configured in theintersection portion 218 in the second input position detectingelectrode 212. However, in the intersection portion 218, the relayelectrode 215 is formed on a layer that is lower than that of theinterlayer insulating film 214, and the relay electrode 215 electricallyconnects the pads 212 a, which are adjacent to each other through thediscontinued portion 218 a, through the contract holes 214 a of theinterlayer insulating film 214. Accordingly, the second input positiondetecting electrodes 212 are electrically connected in the Y direction.In addition, the relay electrode 215 overlaps with the connectionportion 211 c through the interlayer insulating film 214, andaccordingly, the relay electrode 215 and the connection portion 211 cscarcely form a short circuit.

Each of the first input position detecting unit 211 and the second inputposition detecting electrode 212 that are configured as described abovehas rectangle-shaped pad portions 211 a and 212 a having large areas inan area pinched by the intersection portions 218. Accordingly, in thefirst input position detecting electrode 211, the connection portion 211c positioned in the intersection portion 218 is formed in a narrow shapehaving a width smaller than the width of the pad portions 211 a and 212a. In addition, the relay electrode 215 is formed in a narrow shapehaving a width smaller than the width of the pad portions 211 a and 212a.

(Shielding Structure)

According to the electrostatic capacitance-type input device 1 of thisembodiment, the lower layer-side conductive film 4 a includes the inputarea shield electrode 25 that is separated from the relay electrode 215in the input area 2 a. The input area shield electrode 25 overlaps withthe first input position detecting electrode 211 and the second inputposition detecting electrode 212 on the side opposite to the inputoperation side through the interlayer insulating film 214.

In addition, the lower layer-side conductive film 4 a includes the outerperiphery-side shield electrode 28 that is integrally formed with theinput area shield electrode 25. Such an outer periphery-side shieldelectrode 28 overlaps with the wiring 27 through the interlayerinsulating film 214 on the side opposite to the input operation side, inthe outer area 2 b of the input area 2 a. In addition, the outerperiphery-side shield electrode 28 overhangs to the outer periphery siderelative to the interlayer insulating film 214 so as to overlap with theshielding auxiliary electrode 29 so as to be electrically connectedthereto in the end portions 20 f, 20 g, and 20 h corresponding to threesides of the substrate 20.

In addition, the shielding auxiliary electrode 29 includes the secondmounting terminals 24 b on both sides of the arrangement area of thefirst mounting terminal 24 a, and the flexible wiring substrate 35 isconnected to the first mounting terminal 24 a and the second mountingterminal 24 b.

(Operation of Detecting Input Position and the Like)

As represented in FIG. 1B, according to the electrostaticcapacitance-type input device 1 of this embodiment, the IC 10 isconnected to the first mounting terminals 24 a and the second mountingterminals 24 b of the input panel 2 through the flexible wiringsubstrate 35. Here, the IC 10 includes a terminal 11 a that sequentiallyoutputs a position detecting signal VD to the first mounting terminals24 a through the flexible wiring substrate 35 and a terminal 11 b thatoutputs a shield electric potential VS to the second mounting terminal24 b through the flexible wiring substrate 35. In addition, the IC 10includes a ground terminal that outputs the ground electric potential tothe input panel 2. However, since the ground terminal does not directlyrelate to an embodiment of the present invention, it is not shown in thefigure, and the description thereof is omitted.

According to the electrostatic capacitance-type input device 1 that isconfigured as described above, the IC 10, for example, outputs theposition detecting signal VD having a rectangular pulse shape shown inFIG. 1C. As a result, in a case where capacitance is not parasitic onthe input position detecting electrode 21, a signal having a waveformdenoted by a solid line in FIG. 1C is detected from the terminal 11 a.On the other hand, in a case where capacitance is parasitic on the inputposition detecting electrode 21, as denoted by a dotted line in FIG. 1C,distortion of the waveform due to the capacitance occurs. Accordingly,it can be detected whether capacitance is parasitic on the inputposition detecting position electrode 21. Thus, according to thisembodiment, the position detecting signal VD is sequentially output tothe plurality of the input position detecting electrodes 21, and theelectrostatic capacitance coupled with each input position detectingelectrode 21 is monitored. Accordingly, when a finger is in proximity toany one of the plurality of the input position detecting electrodes 21,the electrostatic capacitance of the input position detecting electrode21 to which the finger is in proximity increases by the amount ofelectrostatic capacitance generated between the finger and the inputposition detecting electrode 21. Therefore, an electrode to which thefinger is in proximity can be specified.

(Operation and Advantages of This Embodiment)

The electrostatic capacitance-type input device 1 described withreference to FIGS. 1A to 5C, detects the change in the capacitancecoupled with the input position detecting electrode 21, and accordingly,can be easily influenced by electromagnetic wave noise. Thus, accordingto this embodiment, a shield layer 35 b is formed in the wiring 35 athat is formed in the flexible wiring substrate 35, and the shieldelectric potential VS is applied to the shield layer 35 b through theshielding wire 35c. In this embodiment, as the shield electric potentialVS, an electric potential having the same waveform (including the phase)as the position detecting signal VD supplied to the input positiondetecting electrode 21 is applied. Accordingly, a state in whichcapacitance is not parasitic between the wiring 35 a and the shieldlayer 35 b can be realized.

In addition, in this embodiment, the shield electric potential VS havingthe same waveform (including the phase) as the position detecting signalVD is applied from the IC 10 to the input area shield electrode 25, theouter periphery-side shield electrode 28, and the shielding auxiliaryelectrode 29 through the flexible wiring substrate 35 and the secondmounting terminal 24 b.

Here, the input area shield electrode 25 overlaps with the inputposition detecting electrode 21 on the side opposite to the inputoperation side. Accordingly, electromagnetic wave noise that maypenetrate from the side opposite to the input operation side to theinput position detecting electrode 21 can be blocked by the input areashield electrode 25. In addition, the outer periphery-side shieldelectrode 28 overlaps with the plurality of wirings 27 extending in theouter area 2 b of the input area 2 a of the substrate 20 on the sideopposite to the input operation side. Accordingly, electromagnetic wavenoise that may penetrate into the wiring 27 from the side opposite tothe input operation side can be blocked by the outer periphery-sideshield electrode 28. Accordingly, it is difficult for the input panel 2to be influenced by electromagnetic waves penetrated from the inputoperation side. Therefore, in the electrostatic capacitance-type inputdevice 1 of this embodiment, it is difficult for a malfunction due tothe influence of the electromagnetic wave noise to occur.

In addition, the shield electric potential VS is an electric potentialhaving the same waveform (including the phase) as the position detectingsignal VD supplied to the input position detecting electrode 21.Accordingly, a state in which parasitic capacitance is not generatedbetween the input position detecting electrode 21 and the input areashield electrode 25 and between the wiring 27 and the outerperiphery-side shield electrode 28 can be realized. Thus, even when theinput area shield electrode 25 and the outer periphery-side shieldelectrode 28 are disposed, the detection of an input position can beperformed by using an electrostatic capacitance method without anyproblem.

In addition, the input area shield electrode 25 and the outerperiphery-side shield electrode 28 are formed by the lower layer-sideconductive film 4 a that is used for forming the relay electrode 215. Inaddition, the shielding auxiliary electrode 29 is formed by the upperlayer-side conductive film 4 b that is used for forming the first inputposition detecting electrode 211, the second input position detectingelectrode 212, and the wiring 27. Thus, there is an advantage in thatelectromagnetic shielding for the input position detecting electrode 21and the wiring 27 can be made reliably without adding a separateshielding substrate.

In addition, according to this embodiment, almost the entirety of theouter periphery of the substrate 20 is shielded by the outerperiphery-side shield electrode 28 and the shielding auxiliary electrode29. Accordingly, electromagnetic wave noise that may penetrate into thewiring 27 or the input area 2 a from the periphery (the side) can beblocked.

In addition, in the outer area 2 b of the substrate 20, the firstmounting terminal 24 a and the second mounting terminal 24 b aredisposed by using both the upper layer-side conductive film 4 b and theupper layer-side conductive film 4 b. Accordingly, an electric potentialVS can be applied to the shield electrode from the outside through theflexible wiring substrate 35 connected to the substrate 20. Thus, theshield electric potential VS can be applied to the input area shieldelectrode 25, the outer periphery-side shield electrode 28, and theshielding auxiliary electrode 29 in an easy manner. In addition, acommon flexible wiring substrate 35 may be connected to the firstmounting terminal 24 a and the second mounting terminal 24 b. The secondmounting terminal 24 b is electrically connected to the outerperiphery-side shield electrode 28 on both sides of the arrangement areaof the first mounting terminal 24 a. Accordingly, electromagnetic wavenoise that may penetrate into the wiring 27 or the input area 2 a fromthe periphery (the side) can be blocked.

Embodiment 2

The electrostatic capacitance-type input device 1 that is a typedescribed with reference to FIG. 2A will now be described with referenceto FIGS. 6A to 8C.

FIGS. 6A to 6D are schematic diagrams illustrating the planarconfigurations of the electrostatic capacitance-type input device 1according to Embodiment 2. FIG. 6A is a schematic diagram illustratingthe planar positional relationship of electrodes and the like that areformed on the substrate 20 of the electrostatic capacitance-type inputdevice 1. FIG. 6B is a schematic diagram illustrating the planarconfiguration of the upper layer-side conductive film 4 b that is formedon the substrate 20. FIG. 6C is a schematic diagram illustrating theplanar configuration of the interlayer insulating film 214 that isformed on the substrate 20. FIG. 6D is a schematic diagram illustratingthe planar configuration of the upper layer-side conductive film 4 bthat is formed on the substrate 20. In FIG. 6A, elements that are shownin FIGS. 6B, 6C, and 6D are represented in an overlapping manner. FIG. 7is an enlarged schematic diagram illustrating the planar configurationof electrodes and the like that are formed on the substrate 20 of theelectrostatic capacitance-type input device 1 according to Embodiment 2.FIGS. 8A, 8B, and 8C are schematic diagrams illustrating thecross-sectional configurations of the substrate 20 of the electrostaticcapacitance-type input device 1 according to Embodiment 2. FIGS. 8A, 8B,and 8C are cross-sectional views of the substrate 20 taken along linesA2-A2′, B2-B2′, and C2-C2′ shown in FIGS. 6A to 6D.

The electrostatic capacitance-type input device 1 described below,similarly to Embodiment 1, is an example of the form (the formrepresented in FIG. 2A), in which the lower layer-side conductive film 4a, the interlayer insulating film 214, and the upper layer-sideconductive film 4 b are formed on the first face 20 a that is positionedon the input operation side, according to an embodiment. Here, the upperlayer-side conductive film 4 b corresponds to the first conductive filmthat is positioned on the input operation side, and the lower layer-sideconductive film 4 a corresponds to the second conductive film that ispositioned on the side opposite to the input operation side.

However, in this embodiment, as described below, the shielding auxiliaryelectrode 29 and the wiring 27 are formed in the lower layer-sideconductive film 4 a, and the outer periphery-side shield electrode 28 isformed in the upper layer-side conductive film 4 b. Other configurationsare approximately the same as those of Embodiment 1. Thus, a samereference sign is assigned to each common portion, and detaileddescription thereof is omitted.

(Configuration of Electrodes)

As shown in FIGS. 6A to 6D, FIG. 7, and FIGS. 8A to 8C, according to theelectrostatic capacitance-type input device 1 of this embodiment, on thefirst face 20 a side of the substrate 20, the lower layer-sideconductive film 4 a, the interlayer insulating film 214, and the upperlayer-side conductive film 4 b are sequentially formed from the lowerlayer side toward the upper layer side viewed from the substrate 20. Inthis embodiment, each of the lower layer-side conductive film 4 a andthe upper layer-side conductive film 4 b is formed of a translucentconductive film having a film thickness of 10 nm to 40 nm such as an ITOfilm or an IZO (Indium Zinc Oxide) film, and the interlayer insulatingfilm 214 is formed of a translucent insulating film having a filmthickness of 40 nm to 60 mm such as a silicon oxide film. In order toconfigure such an electrostatic capacitance-type input device 1, first,after the lower layer-side conductive film 4 a is formed in a patternshown in FIG. 6B, the interlayer insulating film 214 is formed in apattern shown in FIG. 6C. Next, the upper layer-side conductive film 4 bis formed in a pattern shown in FIG. 6D.

As shown in FIGS. 6A and 6D, FIG. 7, and FIGS. 8A to 8C, also in thisembodiment, similarly to Embodiment 1, the upper layer-side conductivefilm 4 b is formed as a plurality of rhombic areas in the input area 2a, and the rhombic areas configure pad portions 211 a and 212 a (largearea portions) of the input position detecting electrodes 21 (the firstinput position detecting electrode 211 and the second input positiondetecting electrode 212). Of the plurality of the pad portions 211 a,the pad portions 211 a that are adjacent to each other in the Xdirection (the first direction) are connected together through theconnection portion 211 c, and the pad portion 211 a and the connectionportion 211 c configure the first input position detecting electrode 211that extends in the X direction. On the contrary, the plurality of thepad portions 212 a configure the second input position detectingelectrode 212 that extends in the Y direction (the second direction).However, a portion between the pad portions 212 a that are adjacent toeach other in the Y direction, that is, a portion overlapping with theconnection portion 211 c includes a discontinued portion.

In addition, the upper layer-side conductive film 4 b is formed as theouter periphery-side shield electrode 28 in the outer area 2 b of theinput area 2 a. Here, the outer periphery-side shield electrode 28 isformed up to an area near the end portions 20 f, 20 g, and 20 hcorresponding to three sides of the substrate 20. The outerperiphery-side shield electrode 28 overhangs to the outer periphery siderelative to the outer periphery of the interlayer insulating film 214shown in FIG. 6C near the end portions 20 f, 20 g, and 20 h. Inaddition, the outer periphery-side shield electrode 28 is formed over awide range also near the end portion 20 e of the substrate 20 andoverhangs to the outer periphery side relative to the outer periphery ofthe interlayer insulating film 214. However, the outer periphery-sideshield electrode 28 is formed to have a concave portion 28 a in the areain which the first mounting terminal 24 a is formed. The outerperiphery-side shield electrode 28 is positioned to the inner siderelative to the outer periphery of the interlayer insulating film 214 inan area corresponding to the concave portion 28 a and does not overhangto the outer periphery side of the interlayer insulating film 214 in thearea.

In addition, the upper layer-side conductive film 4 b is also formed inpositions overlapping with the first mounting terminal 24 a and thesecond mounting terminal 24 b.

As shown in FIGS. 6A and 6C, FIG. 7, and FIGS. 8A to 8C, the interlayerinsulating film 214 is formed in the entirety of the input area 2 a. Inaddition, the interlayer insulating film 214 is also formed in the outerarea 2 b of the input area 2 a and is formed in a wide area except theouter periphery of the substrate 20. In the interlayer insulating film214, contact holes 214 a are formed in sets of two. The contact holes214 a are formed in positions overlapping with the end portions of thepad portion 212 a shown in FIG. 6A that face each other through thediscontinued portion 218 a. A gap between the outer periphery of theinterlayer insulating film 214 and the end portion 20 e of the substrate20 is larger than the gaps between the outer periphery of the interlayerinsulating film 214 and other end portions 20 f, 20 g, and 21 h of thesubstrate 20. Accordingly, a space for forming the first mountingterminal 24 a and the second mounting terminal 24 b is secured.

In addition, in the interlayer insulating film 214, contact holes 214 bare formed in positions overlapping with the end portions of the inputposition detecting electrodes 21 (the first input position detectingelectrode 211 and the second input position detecting electrode 212)shown in FIG. 6D. The position of the contact hole 214 b is also aposition overlapping with the end portion of the wiring 27 shown in FIG.6B.

As shown in FIGS. 6A and 6B, FIG. 7, and FIGS. 8A to 8C, the lowerlayer-side conductive film 4 a is formed as the relay electrode 215 inan area of the input area 2 a that overlaps with the contact hole 214 ashown in FIG. 6C. In addition, the lower layer-side conductive film 4 ais formed in the input area 2 a as the input area shield electrode 25having the slit 25 s interposed between the relay electrode 215 and theinput area shield electrode 25. The input area shield electrode 25 isformed over the entirety of the input area 2 a except the relayelectrode 215 and the slit 25 s.

In addition, in the outer area 2 b of the input area 2 a, the lowerlayer-side conductive film 4 a is formed as the wiring 27 that extendsfrom the position overlapping the end portions of the input positiondetecting electrode 21 (the first input position detecting electrode 211and the second input position detecting electrode 212) to the firstmounting terminal 24 a and is formed as the first mounting terminal 24 aand the second mounting terminal 24 b near the end portion 20 e.

In addition, the lower layer-side conductive film 4 a is formed as theshielding auxiliary electrode 29 that passes an outer periphery siderelative to the wiring 27 in the outer area 2 b of the input area 2 a.The shielding auxiliary electrode 29 extends along the end portions 20f, 20 g, and 20 h of the substrate 20, and both ends of the shieldingauxiliary electrode 29 are connected to the second mounting terminal 24b. Here, the shielding auxiliary electrode 29 overhangs to the outerperiphery side relative to the outer periphery of the interlayerinsulating film 214 shown in FIG. 6C in any one of the end portions 20f, 20 g, and 20 h corresponding to three sides of the substrate 20.

By overlapping the lower layer-side conductive film 4 a, the interlayerinsulating film 214, and the upper layer-side conductive film 4 b thatare configured as described above, the relay electrode 215 electricallyconnects the pads 212 a, which are adjacent to each other through thediscontinued portion 218 a, through the contact holes 214 a of theinterlayer insulating film 214. In addition, the end portion of thewiring 27 is electrically connected to the end portion of the inputposition detecting electrode 21 (the first input position detectingelectrode 211 and the second input position detecting electrode 212)through the contact hole 214 b.

(Shielding Structure)

According to the electrostatic capacitance-type input device 1 of thisembodiment, similarly to Embodiment 1, the lower layer-side conductivefilm 4 a includes the input area shield electrode 25 that is separatedfrom the relay electrode 215 in the input area 2 a. The input areashield electrode 25 overlaps with the first input position detectingelectrode 211 and the second input position detecting electrode 212 onthe side opposite to the input operation side through the interlayerinsulating film 214.

In addition, the upper layer-side conductive film 4 b includes the outerperiphery-side shield electrode 28. In the outer area 2 b of the inputarea 2 a, the outer periphery-side shield electrode 28 overlaps with thewiring 27 on the input operation side through the interlayer insulatingfilm 214. In addition, the outer periphery-side shield electrode 28overhangs to the outer periphery side relative to the interlayerinsulating film 214 so as to overlap with the shielding auxiliaryelectrode 29 and be electrically connected thereto in the end portions20 f, 20 g, and 20 h corresponding to three sides of the substrate 20.

(Major Advantages of This Embodiment)

According to this embodiment, similarly to Embodiment 1, a shieldelectric potential VS having the same waveform (including the phase) asthe position detecting signal VD is applied from the IC 10 shown inFIGS. 1A to 1C to the input area shield electrode 25, the outerperiphery-side shield electrode 28, and the shielding auxiliaryelectrode 29 through the flexible wiring substrate 35 and the secondmounting terminal 24 b.

Here, the input area shield electrode 25 overlaps with the inputposition detecting electrode 21 on the side opposite to the inputoperation side. Accordingly, electromagnetic wave noise that maypenetrate from the side opposite to the input operation side to theinput position detecting electrode 21 can be blocked by the input areashield electrode 25.

In addition, the outer periphery-side shield electrode 28 overlaps withthe plurality of wirings 27 extending in the outer area 2 b of the inputarea 2 a of the substrate 20 on the input operation side. Accordingly,electromagnetic wave noise that may penetrate into the wiring 27 fromthe input operation side can be blocked by the outer periphery-sideshield electrode 28.

In addition, the shield electric potential VS is an electric potentialhaving the same waveform (including the phase) as the position detectingsignal VD supplied to the input position detecting electrode 21.Accordingly, the same advantages as those of Embodiment 1 such as theabsence of generation of parasitic capacitance between the inputposition detecting electrode 21 and the input area shield electrode 25and between the wiring 27 and the outer periphery-side shield electrode28 are acquired.

Embodiment 3

The electrostatic capacitance-type input device 1 that is a typedescribed with reference to FIG. 2B will now be described with referenceto FIGS. 9A to 9C. The electrostatic capacitance-type input device 1described below, in contrast to Embodiments 1 and 2, is an example ofthe form (the form represented in FIG. 2B), in which the lowerlayer-side conductive film 4 a, the interlayer insulating film 214, andthe upper layer-side conductive film 4 b are formed on the second face20 b that is positioned on the side opposite to the input operationside, to which the configuration of Embodiment 1 is applied. In theelectrostatic capacitance-type input device 1 having the above-describedconfiguration, the lower layer-side conductive film 4 a corresponds tothe first conductive film that is positioned on the input operationside, and the upper layer-side conductive film 4 b corresponds to thesecond conductive film that is positioned on the side opposite to theinput operation side. Even in a case where such a configuration isemployed, the basic configuration is the same as that of Embodiment 1.Thus, an identical reference sign is assigned to each common portion,and detailed description thereof is omitted.

FIGS. 9A, 9B, and 9C are schematic diagrams illustrating thecross-sectional configurations of the substrate 20 of the electrostaticcapacitance-type input device 1 according to Embodiment 3. FIGS. 9A, 9B,and 9C are cross-sectional views of the substrate 20 taken along linesA1-A1′, B1-B1′, and C1-C1′ shown in FIG. 4.

According to this embodiment, first, the lower layer-side conductivefilm 4 a is formed in the pattern described with reference to FIGS. 3Aand 3D. Next, the interlayer insulating film 214 is formed in thepattern described with reference to FIGS. 3A and 3C. Next, the upperlayer-side conductive film 4 b is formed in the pattern described withreference to FIGS. 3A and 3B. Accordingly, as shown in FIGS. 9A to 9C,the input position detecting electrodes 21 (the first input positiondetecting electrode 211 and the second input position detectingelectrode 212), the wiring 27, and the shielding auxiliary electrode 29are formed by the lower layer-side conductive film 4 a. In addition, inan upper layer of the lower layer-side conductive film 4 a, theinterlayer insulating film 214 including the contact holes 214 a isformed. In addition, the relay electrode 215, the input area shieldelectrode 25, and the outer periphery-side shield electrode 28 areformed by the upper layer-side conductive film 4 b.

As a result, the relay electrode 215 electrically connects the pads 212a, which are adjacent to each other through the discontinued portion 218a, through the contact holes 214 a of the interlayer insulating film214. In addition, the input area shield electrode 25 overlaps with thefirst input position detecting electrode 211 and the second inputposition detecting electrode 212 through the interlayer insulating film214 on the side opposite to the input operation side. In addition, theouter periphery-side shield electrode 28 overlaps with the wiring 27through the interlayer insulating film 214 on the side opposite to theinput operation side in the outer area 2 b of the input area 2 a. Thus,according to this embodiment, similarly to Embodiment 1, electromagneticwave noise that may penetrate from the side opposite to the inputoperation side to the input position detecting electrode 21 can beblocked by the input area shield electrode 25. In addition,electromagnetic wave noise that may penetrate into the wiring 27 fromthe side opposite to the input operation side can be blocked by theouter periphery-side shield electrode 28. Accordingly, it is difficultfor the input panel 2 to be influenced by the penetration ofelectromagnetic waves from the input operation side. Therefore,according to the electrostatic capacitance-type input device 1, the sameadvantages as those of Embodiment 1, such as reduced likelihood ofoccurrence of malfunction due to the influence of electromagnetic wavenoise, are acquired.

Embodiment 4

The electrostatic capacitance-type input device 1 that is a typedescribed with reference to FIG. 2B will now be described with referenceto FIGS. 10A to 10C. The electrostatic capacitance-type input device 1described below is an example of the form (the form represented in FIG.2B), in which the lower layer-side conductive film 4 a, the interlayerinsulating film 214, and the upper layer-side conductive film 4 b areformed on the second face 20 b that is positioned on the side oppositeto the input operation side, to which the configuration of Embodiment 2is applied. In the electrostatic capacitance-type input device 1 havingthe above-described configuration, the lower layer-side conductive film4 a corresponds to the first conductive film that is positioned on theinput operation side, and the upper layer-side conductive film 4 bcorresponds to the second conductive film that is positioned on the sideopposite to the input operation side. Even in a case where such aconfiguration is employed, the basic configuration is the same as thatof Embodiment 2. Thus, a same reference sign is assigned to each commonportion, and detailed description thereof is omitted.

FIGS. 10A, 10B, and 10C are schematic diagrams illustrating thecross-sectional configurations of the substrate 20 of the electrostaticcapacitance-type input device 1 according to Embodiment 4. FIGS. 10A,10B, and 10C are cross-sectional views of the substrate 20 taken alonglines A2-A2′, B2-B2′, and C2-C2′ shown in FIG. 7.

According to this embodiment, first, the lower layer-side conductivefilm 4 a is formed in the pattern described with reference to FIGS. 6Aand 6D. Next, the interlayer insulating film 214 is formed in thepattern described with reference to FIGS. 6A and 6C. Next, the upperlayer-side conductive film 4 b is formed in the pattern described withreference to FIGS. 6A and 6B. Accordingly, as shown in FIGS. 10A to 10C,the input position detecting electrodes 21 (the first input positiondetecting electrode 211 and the second input position detectingelectrode 212) and the outer periphery-side shield electrode 28 areformed by the lower layer-side conductive film 4 a. In addition, in anupper layer of the lower layer-side conductive film 4 a, the interlayerinsulating film 214 including the contact holes 214 a and 214 b isformed. In addition, the relay electrode 215, the input area shieldelectrode 25, the wiring 27, and the shielding auxiliary electrode 29are formed by the upper layer-side conductive film 4 b.

As a result, the relay electrode 215 electrically connects the pads 212a, which are adjacent to each other through the discontinued portion 218a, through the contact holes 214 a of the interlayer insulating film214. In addition, the input area shield electrode 25 overlaps with thefirst input position detecting electrode 211 and the second inputposition detecting electrode 212 through the interlayer insulating film214 on the side opposite to the input operation side. Thus, according tothis embodiment, similarly to Embodiments 1 to 3, electromagnetic wavenoise that may penetrate from the side opposite to the input operationside to the input position detecting electrode 21 can be blocked by theinput area shield electrode 25. In addition, the outer periphery-sideshield electrode 28 overlaps with the wiring 27 through the interlayerinsulating film 214 on the input operation side in the outer area 2 b ofthe input area 2 a. Accordingly, similarly to Embodiment 2,electromagnetic wave noise that may penetrate into the wiring 27 fromthe input operation side can be blocked by the outer periphery-sideshield electrode 28.

Other Embodiments

In the above-described embodiments, the lower layer-side conductive film4 a or the upper layer-side conductive film 4 b is used in forming theouter periphery-side shield electrode 28 for the wiring 27 on the inputoperation side. However, for example, it may be configured that thelight shielding layer 90 a formed in the cover 90 shown in FIGS. 2A and2B is formed by a conductive film formed from chromium or the like, andthe light shielding layer 90 a is used as the shield electrode.

In the above-described embodiments, the liquid crystal device is used asthe image generating device 5. However, an organic electroluminescentdevice may be used as the image generating device 5.

[Example of Mounting in Electronic Apparatus]

Next, an electronic apparatus to which the input device-attachedelectro-optical apparatus 100 according to the above-describedembodiment is applied will be described. FIG. 11A represents theconfiguration of a mobile-type personal computer including the inputdevice-attached electro-optical apparatus 100. The personal computer2000 includes the input device-attached electro-optical apparatus 100 asa display unit and a main body unit 2010. In the main body unit 2010, apower switch 2001 and a keyboard 2002 are disposed. FIG. 11B representsthe configuration of a cellular phone including the inputdevice-attached electro-optical apparatus 100. The cellular phone 3000includes a plurality of operation buttons 3001, scroll buttons 3002, andthe input device-attached electro-optical apparatus 100 as a displayunit. By operating the scroll buttons 3002, the screen displayed in theinput device-attached electro-optical apparatus 100 is scrolled. FIG.11C represents the configuration of a personal digital assistant (PDA)to which the input device-attached electro-optical apparatus 100 isapplied. The personal digital assistant 4000 includes a plurality ofoperation buttons 4001, a power switch 4002, and the inputdevice-attached electro-optical apparatus 100 as a display unit. Whenthe power switch 4002 is operated, various types of information such asan address list or a schedule book is displayed in the inputdevice-attached electro-optical apparatus 100.

In addition, as examples of electronic apparatuses, to which the inputdevice-attached electro-optical apparatus 100 is applied, other than theelectronic apparatuses shown in FIGS. 11A to 11C, there are electronicapparatuses such as a digital still camera, a liquid crystal televisionset, a view finder-type or monitor direct-viewing-type video cassetterecorder, a car navigation system, a pager, an electronic organizer, acalculator, a word processor, a workstation, a television phone, a POSterminal, and a banking terminal. As a display unit of theabove-described various electronic apparatuses, the above-describedinput device-attached electro-optical apparatus 100 can be applied.

It should be understood that various changes and modifications to thepresently preferred embodiments described herein will be apparent tothose skilled in the art. Such changes and modifications can be madewithout departing from the spirit and scope of the present subjectmatter and without diminishing its intended advantages. It is thereforeintended that such changes and modifications be covered by the appendedclaims.

The invention is claimed as follows:
 1. An electrostaticcapacitance-type input device in which a plurality of input positiondetecting electrodes are disposed in an input area of a substrate, theelectrostatic capacitance-type input device comprising: a lowerlayer-side conductive film; an interlayer insulating film; and an upperlayer-side conductive film, which are stacked on the substrate in thisorder from the substrate side, wherein a first input position detectingelectrode that extends in a first direction of an in-plane direction ofthe substrate and a second input position detecting electrode thatextends in a second direction intersecting the first direction of thein-plane direction of the substrate and includes a discontinued portionin an intersection portion of the first input position detectingelectrode and the second input position detecting electrode are formedas the input position detecting electrodes by a first conductive film,which is positioned in an input operation side, out of the lowerlayer-side conductive film and the upper layer-side conductive film, andwherein a relay electrode that overlaps with the first input positiondetecting electrode through the interlayer insulating film in theintersection portion so as to be electrically connected to thediscontinued portion of the second input position detecting electrodeand an input area shield electrode that is separated from the relayelectrode and overlaps with the first input position detecting electrodeand the second input position detecting electrode through the interlayerinsulating film in a plan view are formed by a second conductive film,which is positioned on a side opposite to the input operation side, outof the lower layer-side conductive film and the upper layer-sideconductive film.